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參數資料
型號: W29D040C
廠商: WINBOND ELECTRONICS CORP
英文描述: 512K×8bit CMOS Flash Memory(512K×8位CMOS閃速存儲器)
中文描述: 為512k × 8位的CMOS閃存(為512k × 8位的CMOS閃速存儲器)
文件頁數: 25/40頁
文件大小: 280K
代理商: W29D040C
W29D040C
Publication Release Date: January 1999
- 25 -
Revision A1
To insure the command has been accepted, the system software should check the status of DQ3 prior to and following each
subsequent sector erase command. If DQ3 were high on the second status check, the command may not have been
accepted.
EMBEDDED ALGORITHMS
Start
Read Byte
(DQ0-DQ7)
Address = VA
Pass
Fail
DQ7 = Data
No
Yes
DQ5 = 1
No
Yes
Read Byte
(DQ0-DQ7)
Address = VA
DQ7 = Data
Yes
Data Polling Algorithm
VA = Byte address for programming
= Any of the sector addresses within
the sector being erased during sector
erase operation
= Valid address equals any non-
protected sector group address
during chip erase
No
相關PDF資料
PDF描述
W29EE011P 128K X 8 CMOS FLASH MEMORY
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相關代理商/技術參數
參數描述
W29EE011 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY
W29EE011-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
W29EE011-15 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY
W29EE01115B 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY
W29EE011-15B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|PLASTIC