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參數資料
| 型號： | W29D040C |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 512K×8bit CMOS Flash Memory(512K×8位CMOS閃速存儲器) |
| 中文描述： | 為512k × 8位的CMOS閃存（為512k × 8位的CMOS閃速存儲器） |
| 文件頁數： | 8/40頁 |
| 文件大小： | 280K |
| 代理商： | W29D040C |
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W29D040C
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this period will reset the device to the read mode, ignoring the previous command string. In that case,
restart the erase on those sectors and allow them to complete.
Loading the sector erase buffer may be done in any sequence and with any number of sectors (0 to 8).
Sector erase does not require the user to program the device prior to erase. The device automatically
programs all memory locations in the sector(s) to be erased prior to electrical erase. When erasing a
sector or sectors the remaining unselected sectors are not affected. The system is not required to
provide any controls or timings during these operations.
The automatic sector erase begins after the 80
μ
S time out from the rising edge of the
WE
pulse for the
last sector erase command pulse and terminates when the data on DQ7, Data Polling, is "1" at which
time the device returns to the read mode. Data Polling must be performed at an address within any of the
sectors being erased.
Refer to the Embedded Erase Algorithm using typical command strings and bus operations.
Erase Suspend Command
The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform
data reads or programs to a sector not being erased. This command is applicable only during the Sector
Erase operation which includes the time-out period for sector erase. The Erase Suspend command will
be ignored if written during the Chip Erase operation or Embedded Program Algorithm. Writing the Erase
Suspend command during the Sector Erase time-out results in immediate termination of the time-out
period and suspension of the erase operation.
Any other command written during the Erase Suspend mode will be ignored except the Erase Resume
command. Writing the Erase Resume command resumes the erase operation. The addresses are
"don
′
t-cares" when writing the Erase Suspend or Erase Resume command.
When the Erase Suspend command is written during a Sector Erase operation, the chip will suspend the
operation and go into erase suspended mode, at which time the user can read or program from a sector
that is not being erased. Reading data in this mode is the same as reading from the standard read
mode, except that the data must be read from sectors that have not been erase suspended.
Successively reading from the erase-suspended sector while the device is in the erase-suspend-read
mode will cause DQ2 to toggle. After entering the erase-suspend mode, the user can program the device
by writing the appropriate command sequence for Byte Program. This program mode is known as the
erase suspend-program mode. Again, programming in this mode is the same as programming in regular
Byte Program mode, except that the data must be programmed to sectors that are not erase
suspended. Successively reading from the erase suspended sector while the device is in the erase
suspend-program mode will cause DQ2 to toggle. The end of the erase suspend-program operation is
detected by the DATA Polling of DQ7, or by the Toggle Bit (DQ6), which is the same as the regular Byte
Program operation. Note that DQ7 must be read from the Byte Program address while DQ6 can be read
from any address.
When the erase operation has been suspended, the device defaults to the erase-suspend-read mode.
Reading data in this mode is the same as reading from the standard read mode except that the data
must be read from sectors that have not been erase-suspended.
To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further
writes of the Resume command at this point will be ignored. Another Erase Suspend command can be
written after the chip has resumed erasing.
WRITE OPERATION STATUS
相關PDF資料 |
PDF描述 |
|---|---|
| W29EE011P | 128K X 8 CMOS FLASH MEMORY |
| W29EE011P-15 | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Black; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| W29EE011T-90 | 128K X 8 CMOS FLASH MEMORY |
| W29EE011 | 128K X 8 CMOS FLASH MEMORY |
| W29EE011-15 | 128K X 8 CMOS FLASH MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W29EE011 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY |
| W29EE011-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29EE011-15 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY |
| W29EE01115B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY |
| W29EE011-15B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|PLASTIC |
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