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參數資料
型號: W921F840
廠商: WINBOND ELECTRONICS CORP
英文描述: 4-Bit Microcontroller(4位的微控制器)
中文描述: 4位微控制器(第4位的微控制器)
文件頁數: 45/68頁
文件大小: 451K
代理商: W921F840
W921F840
Publication Release Date: October 1997
- 45 -
Revision A1
Erase Waveforms
D0 to D3
READ
Chip Erase
Erase Verify
T
EPW
T
RDS
T
DV
T
DF
T
DH
T
DS
D
OUT
PROG
High
PROGD / ERASE
Vpp (OSCI)
5V
14V
T
VPS
T
VPH
7.4 Internal ROM
EEPROM (Super EEPROM) Program Method
The ROM of W921F840 is programmed on a page basis. Every page contains 128
×
10-bit of data. A
programming operation is the only way to change data from "1" to "0." To program the
ROM,addresses A0 to A12 must be latched and V
PP
= 12V, V
CC
= 5V,
READ
= V
IH
, and PROG =
V
IL
. Under these conditions, pulsing
PROGD ERASE
/
A0 to A12 must be latched in the latch circuit for program verify operation to be performed correctly.
Program verify mode is entered when V
CC
= 5V, PROG = V
IH,
PROGD ERASE
V
IL
. The programming waveforms are shown below.
low starts the programming operation. Address
/
= V
IH,
and
READ
=
Programming Waveforms
A10 to A12
A0/D0 to A9/D9
LATCH
READ
Program Verify
Program
PROG
Max. 128 addresses x 10-bit
Address Stable
T
LPW
T
AH
T
AS
T
DS
T
DH
T
PUMP
T
PPW
T
DF
T
DV
D
IN
D
IN
D
OUT
//
//
//
//
//
//
PROGD / ERASE
Vpp (OSCI)
5V
12V
T
VPS
//
Address Stable
Address Stable
Address Stable
Address Stable
Address Stable
T
VPH
T
PD
Note: If program range over one or more ROM pages, the PROG must return to high then go low again after another ROM page
address is latched.
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