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參數(shù)資料
型號(hào): W982516BH75I
廠商: WINBOND ELECTRONICS CORP
元件分類(lèi): DRAM
英文描述: 4M X 4 BANKS X 16 BIT SDRAM
中文描述: 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 INCH, 0.80 MM PITCH, TSOP2-54
文件頁(yè)數(shù): 10/43頁(yè)
文件大小: 1570K
代理商: W982516BH75I
W982516BH
- 10 -
Notes:
1. Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the
devices.
2. All voltages are referenced to V
SS
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the
minimum values of t
CK
and t
RC
.
4. These parameters depend on the output loading conditions. Specified values are obtained with
output open.
5. Power-up sequence is further described in the "Functional Description" section.
6. AC Testing Conditions
Output Reference Level
1.4V/1.4V
Output Load
See diagram below
Input Signal Levels
2.4V/0.4V
Transition Time (Rise and Fall) of Input Signal
2 nS
Input Reference Level
1.4V
50 ohms
1.4 V
AC TEST LOAD
Z = 50 ohms
output
50pF
7. Transition times are measured between V
IH
and V
IL
.
8. t
HZ
defines the time at which the outputs achieve the open circuit condition and is not referenced to
output level.
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