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參數資料
型號： W982516BH75I
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 4M X 4 BANKS X 16 BIT SDRAM
中文描述： 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： 0.400 INCH, 0.80 MM PITCH, TSOP2-54
文件頁數： 2/43頁
文件大小： 1570K
代理商： W982516BH75I
W982516BH
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10. TIMING WAVEFORMS....................................................................................................................17
Command Input Timing ..................................................................................................................17
Read Timing ...................................................................................................................................18
Control Timing of Input/Output Data...............................................................................................19
Mode Register Set Cycle................................................................................................................20
11. OPERATING TIMING EXAMPLE....................................................................................................21
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)........................................................21
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto Precharge).............................22
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)........................................................23
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto Precharge).............................24
Interleaved Bank Write (Burst Length = 8).....................................................................................25
Interleaved Bank Write (Burst Length = 8, Auto Precharge)..........................................................26
Page Mode Read (Burst Length = 4, CAS Latency = 3) ................................................................27
Page Mode Read/Write (Burst Length = 8, CAS Latency = 3).......................................................28
Auto Precharge Read (Burst Length = 4, CAS Latency = 3)..........................................................29
Auto Precharge Write (Burst Length = 4) .......................................................................................30
Auto Refresh Cycle.........................................................................................................................31
Self Refresh Cycle..........................................................................................................................32
Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)...............................................33
Power-down Mode..........................................................................................................................34
Auto Precharge Timing (Read Cycle).............................................................................................35
Auto Precharge Timing (Write Cycle).............................................................................................36
Timing Chart of Read to Write Cycle..............................................................................................37
Timing Chart of Write to Read Cycle..............................................................................................37
Timing Chart of Burst Stop Cycle (Burst Stop Command).............................................................38
Timing Chart of Burst Stop Cycle (Precharge Command) .............................................................38
CKE/DQM Input Timing (Write Cycle)............................................................................................39
CKE/DQM Input Timing (Read Cycle)............................................................................................40
Self Refresh/Power-down Mode Exit Timing..................................................................................41
12. PACKAGE DIMENSION..................................................................................................................43
54L TSOP (II)-400 mil.....................................................................................................................43
相關PDF資料
PDF描述
W982516BH75L 4M X 4 BANKS X 16 BIT SDRAM
W9828BADA 128MB (16M x 64) PC100 SDRAM MODULE(符合PC100標準的128MB (16M x 64) 同步動態RAM模塊)
W9832AADA 32MB (4M x 64) PC100 SDRAM MODULE(符合PC100標準的32MB (4M x 64) 同步動態RAM模塊)
W9832AASA 32MB (4M x 64) SDRAM SO-DIMM MODULE(32MB (4M x 64)小型雙列直插同步動態RAM模塊)
W986408AH 2M words x 8 bit x 4 Banks SDRAM(2M字 x 8 位 x 4 組同步動態RAM)
相關代理商/技術參數
參數描述
W982516BH75L 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BIT SDRAM
W9825G2JB 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M ? 4 BANKS ? 32BITS SDRAM
W9825G2JB-6 制造商:Winbond Electronics Corp 功能描述:DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 90-Pin TFBGA 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 166MHZ 90TFBGA
W9825G2JB-6I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 90-Pin TFBGA 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 166MHZ 90TFBGA
W9825G2JB-75 制造商:Winbond Electronics Corp 功能描述:DRAM Chip SDRAM 256M-Bit 8Mx32 3.3V 90-Pin TFBGA 制造商:Winbond Electronics Corp 功能描述:IC SDRAM 256MBIT 133MHZ 90TFBGA
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