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參數資料
| 型號： | FQNL1N50B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 0.27 A, 500 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-92L, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 620K |
| 代理商： | FQNL1N50B |
2001 Fairchild Semiconductor Corporation
March 2001
Rev. A, March 2001
F
QF E T
TM
FQNL1N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.
Features
0.27A, 500V, R
DS(on)
= 9.0
@V
GS
= 10 V
Low gate charge ( typical 4.0 nC)
Low Crss ( typical 3.0 pF)
Fast switching
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQNL1N50B
500
0.27
0.17
1.08
±
30
0.27
0.15
4.5
1.5
0.012
-55 to +150
Units
V
A
A
A
V
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 1)
(Note 1)
(Note 2)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JA
Parameter
Typ
--
Max
83
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient
! "
!
!
S
!
"
"
D
G
TO-92L
FQNL Series
G
S
D
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FQNL1N50BBU | 功能描述:MOSFET 500V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQNL1N50BBU_Q | 功能描述:MOSFET 500V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQNL1N50BTA | 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQNL2N50B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FQNL2N50BBU | 功能描述:MOSFET 500V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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