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參數資料
型號: W28F641B
廠商: WINBOND ELECTRONICS CORP
英文描述: 64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY
中文描述: 64兆比特(的4Mb】16)頁模式的雙工作閃存
文件頁數: 27/31頁
文件大小: 389K
代理商: W28F641B
W28F641B/T
Publication Release Date: March 27, 2003
4. A latency time is required from writing suspend command (#WE or #CE going high) until SR.7 going "1".
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than
t
ERES
and its sequence is repeated, the block erase operation may not be finished.
5. ADDITIONAL INFORMATION
Recommended Operating Conditions
At Device Power-Up
AC timing illustrated in Figure A-1 is recommended for the supply voltages and the control signals at
device power-up. If the timing in the figure is ignored, the device may not operate correctly.
VIH
VIL
DD
VIH
VIL
VIH
VIL
#OE
Valid Address
V
DD
V
Vss
(min)
t
VR
t
2VPH
t
PHQV
#RESET(p)
*1
Vpp
(V)
Vss
V
PPH1/2
ADDRESS
VIH
VIL
(A)
t
t
R or F
t
t
R or F
t
AVQV
#CE
(E)
t
R
t
F
t
ELQV
t
GLQV
#WE
(W)
VIH
VIL
(G)
t
F
t
R
#WP
(S)
VIH
VIL
DATA (D/Q)
VOH
VOL
Valid Output
HIGH Z
*1 To prevent the unwanted writes, system designers should consider the design, which applies V
PP
to 0V during read
operations and V
PPH1/2
during write or erase operations.
Figure A-1. AC Timing at Device Power-up
For the AC specifications t
VR
, t
R
, t
F
in the figure, refer to the next page. See the “ELECTRICAL SPECIFICATIONS“ described in
specifications for the supply voltage range, the operating temperature and the AC specifications not shown in the next page.
- 27 -
Revision A3
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