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參數資料
| 型號： | W28V400B |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY |
| 中文描述： | 4分（為512k × 8/256K × 16）SMARTVOLTA通用閃存 |
| 文件頁數： | 19/48頁 |
| 文件大小： | 1822K |
| 代理商： | W28V400B |
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W28V400B/T
Publication Release Date: April 11, 2003
- 19 -
Revision A4
Bus Operation
Command
Setup
Word/Byte
Write
Comments
Data = 40H or 10H
Addr = Location to Be
Written
Data = Data to Be
Written
Addr = Location to Be
Written
Status Register Data
Write
Write
Word/Byte
Write
Read
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
Repeat for subsequent byte writes.
SR full status check can be done after each Word/Byte
write, or after a sequence of Word/Byte writes.
Write FFH after the last Word/Byte write operation to
p ace device in read array mode.
l
Start
Write 40H or 10H,
Address
Read Status
Register
SR.7=
Full Status
Check if Desired
Word/Byte Write
Complete
Write Word/Byte
Data and Adddress
1
Suspend
Word/Byte
Write
Write Loop
No
Yes
Suspend Word/Byte
0
Full STATUS CHECK PROCEDURE
Read Status Register
Data(See Above)
SR.3=
SR.1=
SR.4=
0
0
0
1
1
1
Vpp Range Error
Device Protect Error
Word/Byte Write Error
Word/Byte Write
Successfully
Bus Operation
Command
Comments
Check SR.3
1 = V
PP
Error Detect
Check SR.1
1 = Device Protect
Detect
Check SR.4
1 = Data Write Error
Standby
Standby
Standby
SR.4, SR.3 and SR.1 are only cleared by the Clear
Status Register command in cases where multiple
locations are written before full status is checked.
If error is detected, clear the Status Register before
attempting retry or other error recovery.
Figure 6. Automated Word/Byte Write Flowchart
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相關代理商/技術參數 |
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|---|---|
| W28V400BT85C | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY |
| W28V400T | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY |
| W28V400TT85C | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY |
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| W28-X01B-3 | 制造商:TE Connectivity 功能描述: |
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