
W28V400B/T
Publication Release Date: April 11, 2003
- 27 -
Revision A4
DC Characteristics
V
DD
= 2.7V
3.6V V
DD
= 5V
±
0.5
PARAMETER
SYM.
TEST
CONDITIONS
Typ.
Max.
Typ.
Max.
UNIT
Input Load Current (Note1)
I
LI
V
DD
= V
DD
Max.
V
IN
= V
DD
or V
SS
±
0.5
±
1
μ
A
Output Leakage Current (Note1)
I
LO
V
DD
= V
DD
Max.
V
OUT
= V
DD
or V
SS
±
0.5
±
10
μ
A
CMOS Level Inputs V
DD
= V
DD
Max.
#CE = #RESET = V
DD
±
0.2V
25
50
30
100
μ
A
V
DD
Standby Current
(Note 1, 3, 6, 10)
I
CCS
TTL Level Inputs
V
= V
Max.
#CE = #RESET = V
IH
0.2
2
0.4
2
mA
V
DD
Reset Power-down Current
(Note 1, 10)
I
CCD
#RESET = V
SS
±
0.2V
I
OUT
(RY/#BY) = 0 mA
4
10
10
μ
A
CMOS Inputs
V
DD
= V
DD
Max., #CE = V
SS
,
f = 5 MHz (3.3V
±
0.3),
f = 5 MHz (2.7V
3.6V)
f = 8 MHz (5V+ 0.5V)
IOUT = 0 mA
15
25
50
mA
V
DD
Read Current
(Note 1, 5, 6)
I
CCR
TTL Inputs
V
DD
= V
DD
Max., #CE = V
SS
,
f = 5 MHz (3.3V
±
0.3),
f = 5 MHz (2.7V
3.6V)
f = 8 MHz (5V
±
0.5V), IOUT = 0 mA
30
65
mA
V
PP
= 2.7V
3.6V
5
17
-
-
mA
V
PP
= 4.5V
5.5V
5
17
35
mA
V
DD
Word/Byte Write Current
(Note 1, 7)
I
CCW
V
PP
= 11.4V
12.6V
5
12
30
mA
V
PP
= 2.7V
3.6V
4
17
-
-
mA
V
PP
= 4.5V
5.5V
4
17
30
mA
V
Block Erase Current
(Note 1, 7)
I
CCE
V
PP
= 11.4V
12.6V
4
12
25
mA
V
DD
Word/Byte Write or Block Erase
Suspend Current (Note1, 2)
I
CCWS
I
CCES
#CE = V
IH
1
6
1
10
mA
I
PPS
V
PP
≤
V
DD
±
2
±
15
±
2
±
15
μ
A
V
PP
Standby or Read Current (Note1)
I
CPPR
V
PP
> V
DD
10
200
10
200
μ
A
V
PP
Deep Power-Down Current (Note1)
I
PPD
#RESET = V
SS
±
0.2V
0.1
5
0.1
5
μ
A
V
PP
= 2.7V
3.6V
12
40
-
-
mA
V
PP
= 4.5V
5.5V
40
40
mA
V
PP
Word/Byte Write Current
(Note 1, 7)
I
PPW
V
PP
= 11.4V
12.6V
30
30
mA
V
PP
= 2.7V
3.6V
8
25
-
-
mA
V
PP
= 4.5V
5.5V
25
25
mA
V
PP
Block Erase Current (Note 1, 7)
I
PPE
V
PP
= 11.4V
12.6V
20
20
mA
V
Word/Byte Write or Block Erase
Suspend Current (Note 1)
I
PPWS
I
PPES
V
PP
= V
PPH1/2/3
10
200
10
200
μ
A