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參數資料
型號: W28V400B
廠商: WINBOND ELECTRONICS CORP
英文描述: 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY
中文描述: 4分(為512k × 8/256K × 16)SMARTVOLTA通用閃存
文件頁數: 41/48頁
文件大小: 1822K
代理商: W28V400B
W28V400B/T
Publication Release Date: April 11, 2003
- 41 -
Revision A4
Reset Operations
RY/#BY(R)
IH
IL
V
V
#RESET(P)
PLPH
t
(A)Reset During Read Array Mode
(C)#RESET Rising Timing
2.7V/3.3V/5V
VIL
IH
IL
V
V
#RESET(P)
235VPH
t
RY/#BY(R)
IH
IL
V
V
#RESET(P)
PLPH
t
(B)Reset During Block Erase, Full Chip Erase, Word/Byte Write or Lock-Bit Configuration
PLRH
t
V
DD
VOL
VOH
VOL
VOH
Figure 17. AC Waveform for Reset Operation
Reset AC Specifications
V
DD
= 2.7V
3.6V
V
DD
= 3.0V
3.6V
V
DD
= 4.5V
5.5V
SYM.
PARAMETER
Min.
Max.
Min.
Max.
Min.
Max.
UNIT
t
PLPH
#RESET Pulse Low Time
(If RP# is tied to
V
DD,
this specification
is not applicable)
100
100
100
nS
t
PLRH
#RESET Low to Reset during Block
Erase or Word/Byte Write (Note 1, 2)
22
20
12
μ
S
t
235VPH
V
DD
2.7V to #RESET High
V
DD
3.0V to #RESET High
V
DD
4.5V to #RESET High (Note 3)
100
100
100
nS
Notes:
1. If #RESET is asserted while a block erase or word/byte write operation is not executing, the reset will complete within 100nS.
2. A reset time, t
PHQV
, is required from the later of RY/#BY or #RESET going high until outputs are valid.
3. When the device power-up, holding #RESET low minimum 100 nS is required after V
DD
has been in predefined range and
also has been in stable there.
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