
W28V400B/T
Publication Release Date: April 11, 2003
- 35 -
Revision A4
V
DD
= 5V
±
0.5V, 5V
±
0.25V, T
A
= 0
°
C to +70° C
5V
±
0.25V(5)
5V
±
0.5V(6)
UNIT
PARAMETER
SYM.
MIN.
MAX.
MIN
MAX.
Write Cycle Time
t
AVAV
85
90
nS
#RESET High Recovery to #WE Going Low
(Note 2)
t
PHWL
1
1
μ
S
#CE Setup to #WE Going Low
t
ELWL
10
10
nS
#WE Pulse Width
t
WLWH
40
40
nS
#RESET V
HH
Setup to #WE Going High (Note 2)
T
PHHWH
100
100
nS
#WP V
IH
Setup to #WE Going High (Note 2)
t
SHWH
100
100
nS
V
PP
Setup to #WE Going High (Note 2)
t
VPWH
100
100
nS
Address Setup to #WE Going High (Note 3)
t
AVWH
40
40
nS
Data Setup to #WE Going High (Note 3)
t
DVWH
40
40
nS
Data Hold from #WE High
t
WHDX
0
0
nS
Address Hold from #WE High
t
WHAX
5
5
nS
#CE Hold from #WE High
t
WHEH
10
10
nS
#WE Pulse Width High
t
WHWL
30
30
nS
#WE High to RY/#BY Going Low
t
WHRL
90
90
nS
Write Recovery before Read
t
WHGL
0
0
nS
V
PP
Hold from Valid SRD, RY/#BY High
(Note 2, 4)
t
QVVL
0
0
nS
#RESET V
HH
Hold from Valid SRD, RY/BY# High
(Note 2, 4)
T
QVPH
0
0
#WP V
IH
Hold from Valid SRD, RY/#BY High
(Note 2, 4)
t
QVSL
0
0
nS
#BYTE Setup to #WE Going High (Note 7)
t
FVWH
40
40
nS
#BYTE Hold from #WE High (Note 7)
t
WHFV
85
90
nS
Notes:
1. Read timing characteristics during block erase and word/byte write operations are the same as during read-only operations.
Refer to AC Characteristics for read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid AIN and DIN for block erase or word/byte write.
4. V
PP
should be held at V
PPH1/2/3
(and if necessary #RESET should be held at V
HH
) until determination of block erase or
word/byte write success (SR.1/3/4/5 = 0).
5. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed Configuration) for
testing characteristics.
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard Configuration) for
testing characteristics.
7. If #BYTE switch during reading cycle, exist the regulations separately.