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參數(shù)資料
| 型號： | W942516CH |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 4M X 4 BANKS X 16 BIT DDR SDRAM |
| 中文描述： | 4米× 4銀行× 16位DDR SDRAM |
| 文件頁數(shù)： | 10/47頁 |
| 文件大小： | 2809K |
| 代理商： | W942516CH |
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W942516CH
- 10 -
7.5 DC Characteristics
MAX.
-6
SYM.
PARAMETER
-5
-7
-75
UNIT
NOTES
I
DD0
OPERATING CURRENT: One Bank Active-Precharge; t
RC
=
t
RC
min; t
CK
= t
CK
min; DQ, DM and DQS inputs changing twice
per clock cycle; Address and control inputs changing once per
clock cycle
OPERATING CURRENT: One Bank Active-Read-Precharge;
Burst = 2; t
RC
= t
RC
min; CL = 2.5; t
CK
= t
CK
min; I
OUT
= 0 mA;
Address and control inputs changing once per clock cycle.
PRECHARGE-POWER-DOWN STANDBY CURRENT: All
Banks Idle; Power down mode; CKE < V
IL
max; t
CK
= t
CK
min;
Vin = V
REF
for DQ, DQS and DM
110
110
110
110
7
I
DD1
120
120
120
120
7, 9
I
DD2P
2
2
2
2
I
DD2F
IDLE FLOATING STANDBY CURRENT: CS > V
IH
min; All
Banks Idle; CKE > V
IH
min; Address and other control inputs
changing once per clock cycle; Vin = Vref for DQ, DQS and DM
45
45
45
40
7
I
DD2N
IDLE STANDBY CURRENT: CS > V
IH
min; All Banks Idle;
CKE > V
IH
min; t
CK
= t
CK
min; Address and other control inputs
changing once per clock cycle; Vin > V
IH
min or Vin < V
IL
max
for DQ, DQS and DM
45
45
45
40
7
I
DD2Q
IDLE QUIET STANDBY CURRENT: CS > V
IH
min; All Banks
Idle; CKE > V
IH
min; t
CK
= t
CK
min; Address and other control
inputs stable; Vin > V
REF
for DQ, DQS and DM
ACTIVE POWER-DOWN STANDBY CURRENT: One Bank
Active; Power down mode; CKE < V
IL
max; t
CK
= t
CK
min
40
40
40
35
mA
7
I
DD3P
20
20
20
20
I
DD3N
ACTIVE STANDBY CURRENT: CS > V
IH
min; CKE > V
IH
min; One Bank Active-Precharge; t
RC
= t
RAS
max; t
CK
= t
CK
min;
DQ, DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst;
One Bank Active; Address and control inputs changing once
per clock cycle; CL=2.5; t
CK
= t
CK
min; I
OUT
= 0mA
OPERATING CURRENT: Burst = 2; Write; Continuous burst;
One Bank Active; Address and control inputs changing once
per clock cycle; CL = 2.5; t
CK
= t
CK
min; DQ, DM and DQS
inputs changing twice per clock cycle
AUTO REFRESH CURRENT: t
RC
= t
RFC
min
SELF REFRESH CURRENT: CKE < 0.2V
RANDOM READ CURRENT: 4 Banks Active Read with
activate every 20ns, Auto-Precharge Read every 20 nS; Burst
= 4; t
RCD
= 3; I
OUT
= 0mA; DQ, DM and DQS inputs changing
twice per clock cycle; Address changing once per clock cycle
70
70
70
65
7
I
DD4R
165
165
165
155
7, 9
I
DD4
W
165
165
165
155
7
I
DD5
I
DD6
190
3
190
3
190
3
190
3
7
I
DD7
270
270
270
270
CK
CK
DQS
RANDOM READ CURRENT Timing
t
RCD
t
RC
t
CK = 10ns
(
I
DD7)
Row d
Row c
Col c
Row e
Row e
Col e
ADDRESS
Row d
Col d
Row f
Row q
Col f
AP
ACT
READ
AP
COMMAND
AP
ACT
ACT
READ
AP
ACT
DQ
Qa
Qb
Qb
Qb
Qb
Qc
Qc
Qc
Qc
Qd
Qd
Qd
Qd
Qe
Qe
Qa
Row h
ACT
Bank 0
READ
Bank 1
Bank 2
Bank 3
Bank 2
Bank 0
READ
Bank 1
Bank 3
Bank 0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9425G6DH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BITS DDR SDRAM |
| W9425G6EH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9425G6EH_0812 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
| W9425G6EH-5 | 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
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