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參數(shù)資料
| 型號： | W942516CH |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 4M X 4 BANKS X 16 BIT DDR SDRAM |
| 中文描述： | 4米× 4銀行× 16位DDR SDRAM |
| 文件頁數(shù)： | 18/47頁 |
| 文件大小： | 2809K |
| 代理商： | W942516CH |
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W942516CH
- 18 -
Function Truth Table, continued
CURRENT
STATE
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
X
X
X
DSL
Nop
->
Row active after t
WR
L
H
H
H
X
NOP
Nop
->
Row active after t
WR
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BS, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BS, RA
ACT
ILLEGAL
3
L
L
H
L
BS, A10
PRE/PREA
ILLEGAL
3
L
L
L
H
X
AREF/SELF
ILLEGAL
Write
Recovering
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
Nop
->
Enter precharge after t
WR
L
H
H
H
X
NOP
Nop
->
Enter precharge after t
WR
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BS, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BS, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BS, RA
ACT
ILLEGAL
3
L
L
H
L
BS, A10
PRE/PREA
ILLEGAL
3
L
L
L
H
X
AREF/SELF
ILLEGAL
Write
Recovering
with Auto
Precharge
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
Nop
->
Idle after t
RC
L
H
H
H
X
NOP
Nop
->
Idle after t
RC
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
X
READ/WRIT
ILLEGAL
L
L
H
X
X
ACT/PRE/PREA
ILLEGAL
Refreshing
L
L
L
X
X
AREF/SELF/MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
Nop
->
Row after t
MRD
L
H
H
H
X
NOP
Nop
->
Row after t
MRD
L
H
H
L
X
BST
ILLEGAL
L
H
L
X
X
READ/WRIT
ILLEGAL
Mode
Register
Accessing
L
L
X
X
X
ACT/PRE/PREA/ARE
F/SELF/MRS/EMRS
ILLEGAL
Notes
:
1. All entries assume that CKE was active (High level) during the preceding clock cycle and the current clock cycle.
2. Illegal if any bank is not idle.
3. Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BS), depending on the
state of that bank.
4. Illegal if t
RCD
is not satisfied.
5. Illegal if t
RAS
is not satisfied.
6. Must satisfy burst interrupt condition.
7. Must avoid bus contention, bus turn around, and/or satisfy write recovery requirements.
8. Must mask preceding data which don’t satisfy t
WR
Remark: H = High level, L = Low level, X = High or Low level (Don’t care), V = Valid data
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9425G6DH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BITS DDR SDRAM |
| W9425G6EH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9425G6EH_0812 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
| W9425G6EH-5 | 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
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