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參數資料
| 型號： | W942516CH |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 4M X 4 BANKS X 16 BIT DDR SDRAM |
| 中文描述： | 4米× 4銀行× 16位DDR SDRAM |
| 文件頁數： | 27/47頁 |
| 文件大小： | 2809K |
| 代理商： | W942516CH |
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W942516CH
Publication Release Date: May 20, 2003
- 27 -
Revision A2
Address Sequence of Sequential Mode
A column access is performed by incrementing the column address input to the device. The
address is varied by the Burst Length as the following.
Addressing Sequence of Sequential Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
n
2 words (address bits is A0)
Data 1
n + 1
not carried from A0 to A1
Data 2
n + 2
4 words (address bit A0, A1)
Data 3
n + 3
Not carried from A1 to A2
Data 4
n + 4
Data 5
n + 5
8 words (address bits A2, A1 and A0)
Data 6
n + 6
Not carried from A2 to A3
Data 7
n + 7
Addressing Sequence of Interleave Mode
A Column access is started from the inputted column address and is performed by
interleaving the address bits in the sequence shown as the following.
9.9.1.1 Address Sequence for Interleave Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
A8 A7 A6 A5 A4 A3 A2 A1 A0
2 words
Data 1
A8 A7 A6 A5 A4 A3 A2 A1
A0
Data 2
A8 A7 A6 A5 A4 A3 A2
A1
A0
4 words
Data 3
A8 A7 A6 A5 A4 A3 A2
A1
A0
Data 4
A8 A7 A6 A5 A4 A3
A2
A1 A0
8 words
Data 5
A8 A7 A6 A5 A4 A3
A2
A1
A0
Data 6
A8 A7 A6 A5 A4 A3
A2
A1
A0
Data 7
A8 A7 A6 A5 A4 A3
A2
A1
A0
相關PDF資料 |
PDF描述 |
|---|---|
| W946432AD | 512K X 4 BANKS X 32 BITS DDR SDRAM |
| W963A6BBN | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963A6BBN70 | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963A6BBN70E | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963A6BBN70I | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W9425G6DH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BITS DDR SDRAM |
| W9425G6EH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9425G6EH_0812 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
| W9425G6EH-5 | 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應商設備封裝:8-MFP 包裝:帶卷 (TR) |
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
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