- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363908 > W942516CH (WINBOND ELECTRONICS CORP) 4M X 4 BANKS X 16 BIT DDR SDRAM PDF資料下載
參數(shù)資料
| 型號： | W942516CH |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 4M X 4 BANKS X 16 BIT DDR SDRAM |
| 中文描述： | 4米× 4銀行× 16位DDR SDRAM |
| 文件頁數(shù)： | 23/47頁 |
| 文件大小： | 2809K |
| 代理商： | W942516CH |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當(dāng)前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁
W942516CH
Publication Release Date: May 20, 2003
- 23 -
Revision A2
The Extended Mode Register Set command can be implemented as needed for function
extensions to the standard (SDR-SDRAM). Currently the only available mode in EMRS is DLL
enable/disable, decoded by A0. The default value of the extended mode register is not defined;
therefore this command must be issued during the power-up sequence for enabling DLL. Refer to
the table for specific codes.
10. No-Operation Command
(
RAS
= "H",
CAS
= "H",
WE
= "H")
The No-Operation command simply performs no operation (same command as Device Deselect).
11. Burst Read Stop Command
(
RAS
= "H",
CAS
= "H",
WE
= "L")
The Burst stop command is used to stop the burst operation. This command is only valid during a
Burst Read operation.
12. Device Deselect Command
(
CS
= "H")
The Device Deselect command disables the command decoder so that the
RAS
,
CAS
,
WE
and Address inputs are ignored. This command is similar to the No-Operation command.
13. Auto Refresh Command
(
RAS
= "L",
CAS
= "L",
WE
= "H", CKE = "L", BS0, BS1, A0 to A12 = Don’t care)
The Auto Refresh command is used to refresh the row address provided by the internal refresh
counter. The Refresh operation must be performed 8192 times within 64ms. The next command
can be issued after t
REF
from the end of the Auto Refresh command. When the Auto Refresh
command is used, all banks must be in the idle state.
14. Self Refresh Entry Command
(
RAS
= "L",
CAS
= "L",
WE
= "H", CKE = "L", BS0, BS1, A0 to A12 = don’t care)
The Self Refresh Entry command is used to enter Self Refresh mode. While the device is in Self
Refresh mode, all input and output buffer (except the CKE buffer) are disabled and the Refresh
operation is automatically performed. Self Refresh mode is exited by taking CKE "high" (the Self
Refresh Exit command). During self refresh, DLLl is disable.
15. Self Refresh Exit Command
(CKE = "H",
CS
= "H" or CKE = "H",
RAS
= "H",
CAS
= "H")
This command is used to exit from Self Refresh mode. Any subsequent commands can be issued
after t
XSNR
(t
XSRD
for Read Command) from the end of this command.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W946432AD | 512K X 4 BANKS X 32 BITS DDR SDRAM |
| W963A6BBN | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963A6BBN70 | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963A6BBN70E | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963A6BBN70I | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9425G6DH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BITS DDR SDRAM |
| W9425G6EH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9425G6EH_0812 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
| W9425G6EH-5 | 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。