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參數(shù)資料
| 型號(hào)： | W946432AD |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 512K X 4 BANKS X 32 BITS DDR SDRAM |
| 中文描述： | 為512k × 4銀行× 32位DDR內(nèi)存 |
| 文件頁數(shù)： | 13/40頁 |
| 文件大?。?/td> | 462K |
| 代理商： | W946432AD |
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W946432AD
13
COMMANDS
Truth Table provides a quick reference of available commands. This is followed by a verbal description of
each command. The additional Function Truth Tables provide current state/ next state information.
TRUTH TABLE (NOTE 1, 2)
Symbol
Command
Device
State
CKEn-1 CKEn
DM
BA0,1
A8
A10,
A9-0
CS
RAS
CAS
WE
ACT
PRE
PREA
WRIT
WRITA
READ
READA Read with Autoprecharge
MRS
Mode Register Set
EMRS
Extended Mode Register Set
NOP
No-Operation
BST
Burst Read Stop
DSL
Device Deselect
AREF
Auto-Refresh
SELF
Self-Refresh Entry
SELEX
Self-Refresh Exit
Bank Active
Bank Precharge
Precharge All
Write
Write with Autoprecharge
Read
Idle (3)
Any (3)
Any
Active (3)
Active (3)
Active (3)
Active (3)
Idle
Any
Active (4)
Any
Idle
Idle
Idle
(S.R)
Idle
Active (5)
Any
(Power down)
Active
Active
H
H
H
H
H
H
H
H
H
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
V
V
X
V
V
V
V
L,L
H,L
X
X
X
X
X
V
L
H
L
H
L
H
V
V
X
X
X
X
X
V
X
X
V
V
V
V
V
V
X
X
X
X
X
L
L
L
L
L
L
L
L
L
L
L
H
L
L
H
L
H
L
H
L
X
X
L
L
L
H
H
H
H
L
L
H
H
X
L
L
X
H
X
H
X
H
X
X
H
H
H
L
L
L
L
L
L
H
H
X
L
L
X
H
X
H
X
H
X
X
H
L
L
L
L
H
H
L
L
H
L
X
H
H
X
X
X
X
X
X
X
X
L
H
X
X
X
X
PD
Power Down Mode Entry
H
L
X
X
X
X
PDEX
Power Down Mode Exit
L
H
X
X
X
X
WDE
WDD
Notes:
(1) V = Valid, X = Don't care, L = Low Level, H = High Level
(2) CKEn signal is input level when commands are provided.
CKEn-1 signal is input level one clock cycle before the command provided.
(3) These are state of bank designated by BA0 BA1 signals.
(4) Applies only to read bursts with autoprecharge disabled; this command should not be used for read
bursts with autoprecharge enabled, and for write bursts.
(5) Power Down Mode can not be entered in the burst cycle.
Data Write Enable
Data Write Disable
H
H
X
X
L
H
X
X
X
X
X
X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W963A6BBN | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963A6BBN70 | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963A6BBN70E | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963A6BBN70I | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
| W963A6BBN80 | 512K WORD X 16 BIT LOW POWER PSEUDO SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9464G6IB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M × 4 BANKS × 16 BITS DDR SDRAM |
| W9464G6IH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M ?? 4 BANKS ?? 16 BITS DDR SDRAM |
| W9464G6JH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M ? 4 BANKS ? 16 BITS DDR SDRAM |
| W9464G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 64M 200MHZ 66TSOP |
| W9464G6JH-5 | 制造商:Winbond Electronics Corp 功能描述:64MBIT DDRI 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 64M 200MHZ 66TSOP |
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