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參數資料
型號: W946432AD
廠商: WINBOND ELECTRONICS CORP
英文描述: 512K X 4 BANKS X 32 BITS DDR SDRAM
中文描述: 為512k × 4銀行× 32位DDR內存
文件頁數: 19/40頁
文件大小: 462K
代理商: W946432AD
W946432AD
PRELIMINARY DATE: 9/8/00
19
.
In the case of a READ being executed to completion, a PRECHARGE command issued at the optimum time
(as described above) provides the same operation that would result from the same READ burst with AUTO
PRECHARGE enabled. The disadvantage of the PRECHARGE command is that it requires that the
command and address buses be available at the appropriate time to issue the command. The advantage of
the PRECHARGE command is that it can be used to truncate bursts.
Figure5:READ BURST – REQUIRED CAS LATENCIES
NOP
NOP
READ
NOP
NOP
NOP
COMMAND
CK
CK
DQS
DQ
DON'T CARE
Bank,
Col n
READ BURST - REQUIRED CAS LATENCIES
ADDRESS
CL=3
DO
n
DO n = Data Out from column n
Burst Length = 4
Show with nominal tAC, tDQSCK, and tDQSQ
相關PDF資料
PDF描述
W963A6BBN 512K WORD X 16 BIT LOW POWER PSEUDO SRAM
W963A6BBN70 512K WORD X 16 BIT LOW POWER PSEUDO SRAM
W963A6BBN70E 512K WORD X 16 BIT LOW POWER PSEUDO SRAM
W963A6BBN70I 512K WORD X 16 BIT LOW POWER PSEUDO SRAM
W963A6BBN80 512K WORD X 16 BIT LOW POWER PSEUDO SRAM
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