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參數資料
型號: W946432AD
廠商: WINBOND ELECTRONICS CORP
英文描述: 512K X 4 BANKS X 32 BITS DDR SDRAM
中文描述: 為512k × 4銀行× 32位DDR內存
文件頁數: 8/40頁
文件大?。?/td> 462K
代理商: W946432AD
W946432AD
512K
×
4 BANKS
×
32 BITS DDR SDRAM
PRELIMINARY DATA:9/8/00
8
NOTES
1. All voltages referenced to V
SS
.
2. Outputs measured with equivalent load:
R
T
=
25 ohms
VTT
A.C TEST LOAD
Rs = 25 ohms
30pF
3. V
REF
is expected to be equal to 0.5*V
DD
Q of the transmitting device, and to track variations in the DC level
of the same. Peak-to-peak noise on V
REF
may not exceed +/-2% of the DC value.
4. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected
to be set equal to V
REF
, and must track variations in the DC level of V
REF
.
5. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK .
6. I
DD
specifications are tested after the device is properly initialized.
7. VIX is the differential clock cross point voltage where input timing measurement is referenced.
CLK
CLK
VssQ
Vix
Vix
8. Beyond 8ns tCK, chip maybe in "DLL off" mode
9. WRITE interrupted by READ is not allowed.
Note:
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